Surfaces, Interfaces, and Applications
- Jessica C. Jones
Jessica C. Jones
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
More by Jessica C. Jones
- Jiayi Xu
Jiayi Xu
Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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- Chang Yan
Chang Yan
Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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- Chunxin Luo
Chunxin Luo
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
Illinois Institute of Technology, Chicago, Illinois 60616, United States
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- Ashley R. Bielinski
Ashley R. Bielinski
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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- Mark Muir
Mark Muir
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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- Adam S. Hock
Adam S. Hock
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
Illinois Institute of Technology, Chicago, Illinois 60616, United States
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- Cong Liu
Cong Liu
Chemical Sciences and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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- Alex B. F. Martinson*
Alex B. F. Martinson
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
*Email: [emailprotected]
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
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https://pubs.acs.org/doi/10.1021/acsami.5c00901
Published April 22, 2025
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© 2025 UChicago Argonne, LLC., Operators of Argonne National Laboratory. Published by American Chemical Society
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Abstract
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Atomic layer deposition (ALD) processes that leverage a myriad of metal–organic and complementary reactant combinations have been identified to realize precise and conformal thin film growth. However, the effects of the ALD reaction byproducts on nucleation and growth mechanisms are rarely considered. Site-selective ALD processes provide an opportunity for the detailed investigation of uniform surface sites with atomistic accuracy. Intentional pretreatment with a known ALD reaction byproduct – isopropanol – enables a significant improvement in the nucleation rate reproducibility of dimethylaluminum isopropoxide and water ALD on rutile TiO2(110). In situ spectroscopic ellipsometry reveals a partially reversible byproduct binding that is site-selective for TiO2(110) surface oxygen vacancies. First-principles calculations reveal surface site-specific thermodynamics for adsorption of isopropanol and water that may influence ALD nucleation. The sensitivity of site-selective ALD motivates consideration of secondary surface reactions when designing precision deposition processes, including area- or site-selective ALD reactions.
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© 2025 UChicago Argonne, LLC., Operators of Argonne National Laboratory. Published by American Chemical Society
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- Atomic layer deposition
- Byproducts
- Nucleation
- Oxides
- Thickness
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 22, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 UChicago Argonne, LLC., Operators of Argonne National Laboratory. Published by American Chemical Society
Request reuse permissions
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